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Jo`shqin Abdullayev

Работ: 14

National University of Uzbekistan

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 14
    ABI

  2. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 10
    ABI

  3. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 9
    ABI

  4. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 9
    ABI

  5. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    СтатьяSemiconductor Quantum Structures and DevicesLow Temperature Physics2025Цитирований: 9
    ABI

  6. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
    ABI

  7. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
    ABI

  8. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
    ABI

  9. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
    ABI

  10. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 3
    ABI

  11. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 2
    ABI

  12. Bandgap-Engineered pSi/n-CdₓS₁₋ₓ Heterojunctions: Effect of Composition on Optoelectronic Behavior

    I. B. Sapaev, Jamoliddin I. Razzokov, Jo`shqin Abdullayev +2

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2025Цитирований: 2
    ABI

  13. Low-Temperature Electrophysical and optical Properties of p-Si/n-CdS Heterojunctions

    Jo`shqin Abdullayev, I. B. Sapaev, Jamoliddin Razzokov +2

    ПрепринтSemiconductor materials and interfacesSSRN Electronic Journal2025Цитирований: 0
    ABI

  14. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
    ABI