Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration
Аннотация
In this article, we analytically study the electrophysical features of the p-Si/n-GaAs radial heterojunction (RHJ) over a temperature range of 50 K to 500 K, in increments of 50 K while considering various doping concentrations. The analysis encompasses band gap narrowing (BGN), the differences in the band gap between GaAs and Si as a function of temperature, and the built-in potential relative to temperature. In particular, we focus on core p-Si with a radius of 0.5 μm and shell n-GaAs with a radius of 1 μm within the structure. Our findings indicate that the thickness of the depletion region in the p-Si/n-GaAs (RHJ) increases with rising temperature. The band gap difference between GaAs and Si is 0.31 eV at 300 K in our model, which is in good agreement with the experimental results. Additionally, the conduction band offset ∆EC=0.04 eV and the valence band offset ∆EV=0.27eV were calculated at 300 K. When the doping concentration changes from 2∙1015 to 2∙1018 band gap narrowing (BGN) decreases by 2 meV. Additionally, the built-in potential of the p-Si/n-GaAs (RHJ) decreases by 76 mV with increasing temperature.