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Работы, на которые ссылается эта работа

Работ: 15

Работа: Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 14
    ABI

  2. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Статья2024Цитирований: 13
    ABI

  3. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    Статья2012Цитирований: 11
    ABI

  4. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Статья2016Цитирований: 11
    ABI

  5. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 10
    ABI

  6. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Статья2013Цитирований: 10
    ABI

  7. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Статья2019Цитирований: 10
    ABI

  8. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 9
    ABI

  9. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11

    Статья2011Цитирований: 9
    ABI

  10. Improvement of carrier ballisticity in junctionless nanowire transistors

    Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2

    Статья2011Цитирований: 9
    ABI

  11. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

    Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8

    Статья2015Цитирований: 9
    ABI

  12. Electrical and optical properties of nanowires based solar cell with radial p-n junction

    O. V. Pylypova, А.А. Еvtukh, P.V. Parfenyuk +4

    Статья2019Цитирований: 8
    ABI

  13. Controlled Doping Methods for Radial p/n Junctions in Silicon

    Rick Elbersen, Roald M. Tiggelaar, Alexander Milbrat +3

    Статья2014Цитирований: 7
    ABI

  14. Theory of the Junctionless Nanowire FET

    Elena Gnani, A. Gnudi, Susanna Reggiani +1

    Статья2011Цитирований: 6
    ABI

  15. A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers

    S.C. Jain, D.J. Roulston

    Статья1991Цитирований: 2
    ABI