Sardor R. Kadirov

Работ: 4

Urgench State University, Urgench, Uzbekistan

1. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5

   ABIABI:AkademIndex/openalex/2025.article.000840

2. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5

   ABIABI:AkademIndex/openalex/2025.article.000841

3. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 3

   ABIABI:AkademIndex/openalex/2025.article.001173

4. Low-Temperature Electrophysical and optical Properties of p-Si/n-CdS Heterojunctions

   Jo`shqin Abdullayev, I. B. Sapaev, Jamoliddin Razzokov +2

   ПрепринтSemiconductor materials and interfacesSSRN Electronic Journal2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.preprint.000212