Статья

Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

Б.Г. АтабаевArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKh. N. JuraevS. A. Azimov Physical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanZ. Sh. ShaymardanovArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanR.R. JalolovArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanШ.З. УроловArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

Journal of Applied Spectroscopyjournal2025en

ABI

Аннотация

Аннотация отсутствует.

Темы

Silicon Carbide Semiconductor Technologies Silicon Nanostructures and Photoluminescence Silicon and Solar Cell Technologies

Идентификаторы

DOI: 10.1007/s10812-025-01994-y

Цитирования и источники

Цитирований: 0Использованных источников: 28

Показатели — AkademScholar · Скоро