N. B. Adilov

1 ta ish

Physicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, 2B Chingiz Aitmatov Str., Tashkent, 100084, Republic of Uzbekistan

Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion
Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3
MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics20201 iqtibos
ABI

N. B. Adilov

Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion