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Kh. N. Juraev

27 ta ish

Physical-Technical Institute, Uzbek Academy of Sciences, Chingiz Aytmatov Street, 2 “B”, Tashkent 100084, Uzbekistan

  1. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

    G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

    MaqolaSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202011 iqtibos
    ABI

  2. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 iqtibos
    ABI

  3. Peculiarities of the Temperature Dependence of the Chemical Potential of a Two-dimensional Electron Gas in Magnetic Field

    B. T. Abdulazizov, G. Gulyamov, P. J. Baymatov +3

    MaqolaQuantum and electron transport phenomenaSPIN20228 iqtibos
    ABI

  4. Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires

    G. Gulyamov, A. B. Davlatov, Kh. N. Juraev

    MaqolaOptical properties and cooling technologies in crystalline materialsLow Temperature Physics20227 iqtibos
    ABI

  5. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos
    ABI

  6. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 iqtibos
    ABI

  7. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    MaqolaSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 iqtibos
    ABI

  8. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition

    I. G. Atabaev, M. U. Hajiev, V. A. Pak +2

    MaqolaTransition Metal Oxide NanomaterialsApplied Solar Energy20164 iqtibos
    ABI

  9. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    MaqolaSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 iqtibos
    ABI

  10. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

    I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

    MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 iqtibos
    ABI

  11. Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

    Kh. N. Juraev, M. U. Hajiev, A. Kutlimratov +2

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Science20241 iqtibos
    ABI

  12. Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

    P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov +2

    MaqolaQuantum and electron transport phenomenaJournal of Computational Electronics20241 iqtibos
    ABI

  13. Effects of Band Nonparabolicity on the Resonance Peaks of the Single-Particle Entropy of a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, Mahmudjon Tohirjonov +3

    MaqolaQuantum and electron transport phenomenaInternational Journal of Theoretical Physics20241 iqtibos
    ABI

  14. Rapid 3D Defect Mapping in SiC Betavoltaics via Positron Annihilation Tomograph

    Б.Г. Атабаев, V. I. Chepurnov, N.Yu. Arutyunov +3

    MaqolaAdvanced Energy Technologies and Civil Engineering Innovationsphysica status solidi (RRL) - Rapid Research Letters20251 iqtibos
    ABI

  15. Temperature Dependence of the Occupancy of Landau Subbands in a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, A. A. Saydaliev +2

    MaqolaQuantum and electron transport phenomenaActa Physica Polonica A20251 iqtibos
    ABI

  16. The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al<sub>2</sub>O<sub>3</sub>‐<i>p</i>‐CdTe‐Mo Structure

    A.K. Uteniyazov, A. Yu. Leyderman, M. V. Gafurova +2

    MaqolaIntermetallics and Advanced Alloy PropertiesAdvances in Materials Science and Engineering20210 iqtibos
    ABI

  17. Study of n-SnO2/p-Si Heterostructures Fabricated by Chemical Vapor Deposition Methods

    M. U. Khazhiev, R. R. Kabulov, A. G. Gulyamov +2

    MaqolaZnO doping and propertiesApplied Solar Energy20210 iqtibos
    ABI

  18. Formation and Properties of ITO Films Produced on Silicon for Applications in Solar Cells

    A.S. Saidov, A. Kutlimratov, R. R. Kabulov +3

    MaqolaZnO doping and properties20230 iqtibos
    ABI

  19. Theoretical study of the threshing process of corn cob under the influence of the rasp bars

    G G Fozilov, A Akhmedov, Sh. U. Yuldashev +2

    MaqolaAgricultural Engineering and MechanizationIOP Conference Series Earth and Environmental Science20240 iqtibos
    ABI

  20. ITO Films Deposited on Silicon by CVD Method

    R. R. Kabulov, A. Kutlimratov, A.S. Saidov +2

    MaqolaZnO doping and propertiesSurface Engineering and Applied Electrochemistry20250 iqtibos
    ABI

  21. Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

    Б.Г. Атабаев, Kh. N. Juraev, Z. Sh. Shaymardanov +2

    MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Applied Spectroscopy20250 iqtibos
    ABI

  22. Internal Energy and Heat Capacity of a Two-Dimensional Electron Gas in a Half-Filled Landau Subband

    B. T. Abdulazizov, P. J. Baymatov, O. M. Yunusov +2

    MaqolaQuantum and electron transport phenomenaInternational Journal of Theoretical Physics20250 iqtibos
    ABI

  23. Local overheating of a photovoltaic module junction box: analysis and recommendations

    Farkhodjon Turaev, I. A. Yuldoshev, Kh. N. Juraev +3

    MaqolaSilicon and Solar Cell TechnologiesClean Energy20250 iqtibos
    ABI

  24. Morphology and Electrical Properties of ITO Films Obtained on Silicon Substrates by CVD Method

    A.S. Saidov, Sh.N. Usmonov, M. U. Hajiev +9

    MaqolaZnO doping and propertiesEast European Journal of Physics20250 iqtibos
    ABI

  25. Development and investigation of the electrophysical and spectrometric characteristics of a <i>p</i> -Si/ <i>n</i> -InP heterostructure radiation detector

    A.S. Saidov, S. A. Radzhapov, Shukrullo Usmonov +3

    MaqolaRadiation Effects in ElectronicsOxford Open Materials Science20260 iqtibos
    ABI