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Temperature Dependence of the Occupancy of Landau Subbands in a Two-Dimensional Electron Gas

B. T. AbdulazizovNamangan State University, Uychinskaya 316, 716019 Namangan, UzbekistanP. J. BaymatovNamangan State University, Uychinskaya 316, 716019 Namangan, UzbekistanA. A. SaydalievNamangan Institute of Engineering and Technology, Kosonosoy Street 7, 160115 Namangan, UzbekistanO. M. YunusovPhysical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov str. 2B, 100084 Tashkent, UzbekistanKh. N. JuraevPhysical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov str. 2B, 100084 Tashkent, Uzbekistan
Acta Physica Polonica Ajournal2025en
ABI

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Numerical modeling has been used to study the temperature dependence of the chemical potential and the occupation of the Landau subbands in a two-dimensional electron gas. Calculations were performed for various values of the filling factor ν, taking into account the level broadening due to scattering events. Graphs depicting the temperature dependence of the electron concentration within the Landau subbands were constructed. These dependencies enable the analysis of the thermal excitations of electrons between subbands. Additionally, a simple model was used to identify the thermal excitations of electrons within a single subband.

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