Influence of Defects on Low Temperature Diffusion of Boron in SiC
I. G. AtabaevPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;Tojiddin M. SalievPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;Dilmurad SAIDOVPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;V. A. PakPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;Kh. N. JuraevPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;Chin‐Che TinDepartment of Physics, Auburn University, Alabama, USA;Б.Г. АтабаевArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, UzbekistanVyacheslav N. GiryanskyArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, Uzbekistan
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Annotatsiya
The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified model of such diffusion is presented. The method of UV stimulated etching by aqueous solution of KOH is proposed and some experimental data on influence of defects on quality of prepared p-n junctions are presented.
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