Vyacheslav N. Giryansky

1 ta ish

Arifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, Uzbekistan

1. Influence of Defects on Low Temperature Diffusion of Boron in SiC

   I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.390730