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Dilmurad SAIDOV

3 ta ish

Physical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;

  1. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos
    ABI

  2. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 iqtibos
    ABI

  3. Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

    Kh. N. Juraev, M. U. Hajiev, A. Kutlimratov +2

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Science20241 iqtibos
    ABI