Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion
Kh. N. JuraevPhysical-Technical Institute of Uzbekistan Academy of SciencesM. U. HajievPhysical-Technical Institute of Uzbekistan Academy of SciencesA. KutlimratovPhysical-Technical Institute of Uzbekistan Academy of SciencesA.R. AkhmedovTashkent Institute of Irrigation and Agricultural Mechanization EngineersDilmurad SAIDOVUrgench branch of Tashkent University of Information Technologies named after Muhammad al-Khwarizmi Urgench
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In this paper, the electrophysical characteristics of the 4H-SiC p-n junction created by low-temperature diffusion of aluminum were studied. Current-voltage (I-V) characteristics are analysed, and the current transport mechanisms in 4H-SiC p-n junctions are discussed. It is shown that at low forward bias voltages, the generation–recombination mechanism dominates, and the I-V characteristics at voltages U > 3.0 V obey the linear law. At reverse biases, the dominant mechanism of current transfer is limited by the space charge.
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