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17 ta ish

Ish: Influence of Defects on Low Temperature Diffusion of Boron in SiC

  1. Investigation of boron diffusion in 6H-SiC

    Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan

    Maqola20035 iqtibos
    ABI

  2. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

    MaqolaSilicon and Solar Cell TechnologiesThin Solid Films20105 iqtibos
    ABI

  3. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos
    ABI

  4. Oxidation kinetics of hot-pressed silicon carbide

    Subhash C. Singhal

    Maqola19764 iqtibos
    ABI

  5. Diffusion of boron in silicon carbide

    K. Rüschenschmidt, H. Bracht, Michael Laube +2

    Maqola20013 iqtibos
    ABI

  6. Vacancy defects in silicon carbide

    O. Girka, E. N. Mokhov

    Maqola19953 iqtibos
    ABI

  7. Sarlavhasiz

    Boshqa3 iqtibos
    ABI

  8. Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide

    Kazuhiro Mochizuki, Haruka Shimizu, Natsuki Yokoyama

    Maqola20092 iqtibos
    ABI

  9. Electron paramagnetic resonance of deep boron acceptors in 4H-SiC and 3C-SiC crystals

    P. G. Baranov, I. V. Il’in, E. N. Mokhov

    Maqola19982 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa1 iqtibos
    ABI