Oxide film assisted dopant diffusion in silicon carbide
Chin‐Che TinDepartment of Physics, Auburn University, Alabama 36849, USASuwan MendisDepartment of Physics, Auburn University, Alabama 36849, USAKerlit ChewDepartment of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur, MalaysiaI. G. AtabaevPhysical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent, UzbekistanTojiddin M. SalievPhysical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent, UzbekistanÉ. N. BakhranovPhysical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent, UzbekistanБ.Г. АтабаевInstitute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent, UzbekistanVíctor AdedejiDepartment of Chemistry, Geology & Physics, Elizabeth City State University, North Carolina 27909, USARusli RusliSchool of Electrical & Electronic Engineering , Nanyang Technological University , Singapore
ABI
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