Excess tunneling currents in p-Si-n-3C-SiC heterostructures
Smagul KarazhanovPhysicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 700084, UzbekistanI. G. AtabaevPhysicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 700084, UzbekistanTimur SalievPhysicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 700084, UzbekistanÉ. V. KanakiPhysicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 700084, UzbekistanE. DzhaksimovPhysicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 700084, Uzbekistan
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An attempt is made to interpret the current-voltage characteristic of a p-Si-n-3C-SiC heterostructure in terms of the excess-tunneling mechanism. The space charge region width W and tunneling length λ are estimated. It is shown that W ≫ λ and, despite this, that the current transport through the heterostructure obeys the tunneling mechanism. The characteristic tunneling energy ɛ=57 meV, temperature coefficient of the saturation current, and the barrier thinness factor are found.
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