É. V. Kanaki

2 ta ish

Beruni Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan

1. Electrical properties of semiconductors with pair defects

   Smagul Karazhanov, É. V. Kanaki

   MaqolaSilicon and Solar Cell TechnologiesSemiconductors20001 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000183

2. Excess tunneling currents in p-Si-n-3C-SiC heterostructures

   Smagul Karazhanov, I. G. Atabaev, Timur Saliev +2

   MaqolaSilicon Carbide Semiconductor TechnologiesSemiconductors20010 iqtibos

   ABIABI:AkademIndex/openalex/2001.article.000090