Liquid phase epitaxy of Ge1−xSnx semiconductor films
A.S. SaidovPhysical Engineering Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. Sh. RazzakovPhysical Engineering Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanÉ. A. KoshchanovPhysical Engineering Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
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Epitaxial layers of Ge1−x Snx semiconductor solid solutions on germanium substrates were grown from a limited volume of a tin-based solution melt in a temperature interval from 740 to 450°C. Optimum conditions favoring the growth of crystallographically perfect epitaxial films were established based on the results of the X-ray diffraction and morphological study of the samples.
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