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Akramjon Y. Boboev

21 ta ish

Andijan state university named after Z.M. Babur, Andijan, Uzbekistan; Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan;

  1. Effect of γ-Irradiation on Structure and Electrophysical Properties of S-Doped ZnO Films

    С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev

    MaqolaZnO doping and propertiesEast European Journal of Physics20247 iqtibos
    ABI

  2. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

    A.S. Saidov, С. З. Зайнабидинов, M. U. Kalanov +2

    MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20156 iqtibos
    ABI

  3. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, A.S. Saidov, A. Yu. Leĭderman +4

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20165 iqtibos
    ABI

  4. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

    С. З. Зайнабидинов, A.S. Saidov, Akramjon Y. Boboev +1

    MaqolaSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 iqtibos
    ABI

  5. Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

    С. З. Зайнабидинов, Sharifa B. Utamuradova, Akramjon Y. Boboev

    MaqolaChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20224 iqtibos
    ABI

  6. Structural Properties of Al-Doped ZnO Films

    С. З. Зайнабидинов, Shakhriyor Kh. Yulchiev, Akramjon Y. Boboev +2

    MaqolaZnO doping and propertiesEast European Journal of Physics20243 iqtibos
    ABI

  7. An Optimized Ultrasonic Spray Pyrolysis Device for The Production of Metal Oxide Films and Their Morfology

    С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev +1

    MaqolaZnO doping and propertiesEast European Journal of Physics20243 iqtibos
    ABI

  8. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, A.S. Saidov, M. U. Kalanov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20192 iqtibos
    ABI

  9. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

    S.Z. Zaynabidinov, A.S. Saidov, Akramjon Y. Boboev +1

    MaqolaSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20222 iqtibos
    ABI

  10. Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure

    С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov

    MaqolaSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)20191 iqtibos
    ABI

  11. X-Ray Structural and Photoelectric Properties of SnO2, ZnO, and Zn2SnO4 Metal Oxide Films

    Khotamjon J. Mansurov, Akramjon Y. Boboev, Jakhongir A. Urinboyev

    MaqolaZnO doping and propertiesEast European Journal of Physics20241 iqtibos
    ABI

  12. Photoelectric Characteristics of the Heterojunction n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y

    Akramjon Y. Boboev

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20241 iqtibos
    ABI

  13. Influence of Temperature on Current-Voltage characteristics of n-GaAs – p-(GaAs)1-x-y(ZnSe)x(Ge2)y heterostructures

    Akramjon Y. Boboev, Makhmud Kalano, Sirojiddin Zainabidinov

    MaqolaSemiconductor materials and interfaces20160 iqtibos
    ABI

  14. Features of the Electrical Properties of Heterojunctions n-GaAs-p-(GaAs)1 - x - у(Ge2)x(ZnSe)y

    SIRAJIDDIN ZAYNABIDINOV, Akramjon Y. Boboev, DILHAYOTJON ABDURAHIMOV

    MaqolaSemiconductor materials and interfacesComputational nanotechnology20220 iqtibos
    ABI

  15. The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

    С. З. Зайнабидинов, Khotamjon J. Mansurov, Akramjon Y. Boboev +1

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos
    ABI

  16. Surface Morphology and Roughness of Sulfur-Doped ZnO Thin Films: Analysis Based on Atomic Force Microscopy

    Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev, Khushroy A. Makhmudov +3

    MaqolaZnO doping and propertiesEast European Journal of Physics20250 iqtibos
    ABI

  17. Study of the Formation of Low-Dimensional Defect States in Single-Crystal Silicon with the Participation of Oxygen

    Akramjon Y. Boboev, Biloliddin M. Ergashev, Nuritdin Y. Yunusaliyev +1

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos
    ABI

  18. Simulation of Radiation-Induced Structural and Optical Modifications in ZnO:S/SI Thin Film Structures

    Akramjon Y. Boboev, Khushroy A. Makhmudov, Nuritdin Y. Yunusaliyev +3

    MaqolaAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics20250 iqtibos
    ABI

  19. The Impact of Various Lighting Conditions on the Photosensitive Properties of Si<B,S> and Si<B,Rh> Structures

    Akramjon Y. Boboev, Shakhriyor Kh. Yulchiev, Ziyodjon M. Ibrokhimov +1

    MaqolaAdvanced Energy Technologies and Civil Engineering InnovationsEast European Journal of Physics20250 iqtibos
    ABI

  20. Thermal evolution of impurity-induced energy levels in platinum-doped silicon

    Sirojidin Zaynabidinov, Akramjon Y. Boboev, Abdulxakim Xakimov +4

    MaqolaSilicon and Solar Cell Technologies20260 iqtibos
    ABI

  21. Effect of Impurity Clusters on Optical Properties of Nickel and Copper Doped Single-Crystal Silicon

    S. Z. Zainabidinov, N.A. Turgunov, Akramjon Y. Boboev +6

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20260 iqtibos
    ABI