Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots
A.S. SaidovPhysical-Technical Institute, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2, Tashkent, 700084, UzbekistanС. З. ЗайнабидиновAndijan State University, ul. Universitetskaya 129, Andizhan, 170100, UzbekistanM. U. KalanovInstitute of Nuclear Physics of Uzbekistan, Ulugbek, Tashkent, 100214, UzbekistanAkramjon Y. BoboevInstitute of Nuclear Physics of Uzbekistan, Ulugbek, Tashkent, 100214, UzbekistanB. R. KutlimurotovInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durmena 33, Tashkent, 100125, Uzbekistan
ABI
Annotatsiya
The spectral photosensitivity of n(GaAs)-p(GaAs)1–x–y (ZnSe) x (Ge2) y heterostructures in the photon energy range from 1.1 to 2.7 eV is studied. The peak sensitivity of the structure was found for a photon energy 2.62 eV, due to the impurity levels of ZnSe lying in the valence band of the solid solution.
Hali tarjima qilinmagan