Jakhongir N. Usmonov

4 ta ish

Andijan State University, 170100, Andijan, Uzbekistan

1. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

   С. З. Зайнабидинов, A.S. Saidov, Akramjon Y. Boboev +1

   MaqolaSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.238420

2. An Optimized Ultrasonic Spray Pyrolysis Device for The Production of Metal Oxide Films and Their Morfology

   С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev +1

   MaqolaZnO doping and propertiesEast European Journal of Physics20243 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.290707

3. Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure

   С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov

   MaqolaSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)20191 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.386220

4. The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

   С. З. Зайнабидинов, Khotamjon J. Mansurov, Akramjon Y. Boboev +1

   MaqolaSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.008697