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Lotin
Oʻzbek

U. P. Asatova

7 ta ish

Urgench State University, ul. Kh. Alimdzhana 14, Urgench, 220100, Uzbekistan

  1. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20109 iqtibos
    ABI

  2. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    MaqolaPhotonic and Optical DevicesSemiconductors20124 iqtibos
    ABI

  3. Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    MaqolaAdvanced Thermoelectric Materials and DevicesApplied Solar Energy20103 iqtibos
    ABI

  4. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20201 iqtibos
    ABI

  5. Features of Liquid–Phase Epitaxy of (InSb)<sub>1–z</sub>(Sn2)<sub>z</sub> Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

    Shukrullo Usmonov, U. P. Asatova, A. M. Akhmedov

    MaqolaSemiconductor Quantum Structures and Devices20221 iqtibos
    ABI

  6. The influence of Co 60 quanta on current characteristics of rectifier columns on the base of silicon

    G. Aripov, A. É. Atamuratov, U. P. Asatova +2

    MaqolaElectric Power Systems and Control19950 iqtibos
    ABI

  7. Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)<sub>1-x-y</sub>(Ge2)<sub>x</sub>(ZnSe)<sub>y</sub>

    Shavkat Ismailov, D. V. Saparov, А. С. Саидов +2

    MaqolaPhase-change materials and chalcogenides20240 iqtibos
    ABI