Maqola

Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

А. С. СаидовNPO Fizika-Solntse, Physicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. N. UsmonovNPO Fizika-Solntse, Physicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanU. P. AsatovaNPO Fizika-Solntse, Physicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

Applied Solar Energyjournal2010en

ABI

Annotatsiya

By the method of liquid phase epitaxy, the epitaxial layers of a substitutional solid solution of the (InSb)1 − x (Sn2) x (1 ≤ x ≤ 0.05) p type of conductivity on nGe substrates were grown from a limited volume of an indium solution melt. It has been found that during the heating of the structure in the dark, an electrical current and voltage are generated in it.

Mavzular

Advanced Thermoelectric Materials and Devices Chalcogenide Semiconductor Thin Films Innovation Diffusion and Forecasting

Identifikatorlar

DOI: 10.3103/s0003701x10020052

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