Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API

A. M. Akhmedov

9 ta ish

Tashkent Institute of Irrigation and Agriculture Mechanization Engineers, Kory Niyoziy Str. 39, Tashkent 100000, Uzbekistan

  1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +5

    MaqolaSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 iqtibos
    ABI

  2. Dielectric and microwave properties of ceramics of the Bi-Ti-O system

    Halina Sauchuk, Natallia Yurkevich, A. M. Akhmedov +3

    MaqolaFerroelectric and Piezoelectric MaterialsE3S Web of Conferences20236 iqtibos
    ABI

  3. The influence of production conditions on the electrophysical parameters of piezoceramics for different applications

    A. M. Akhmedov, Galina Sauchuk, Natallia Yurkevich +3

    MaqolaFerroelectric and Piezoelectric MaterialsE3S Web of Conferences20216 iqtibos
    ABI

  4. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    A.S. Saidov, Sh. N. Usmonov, D. V. Saparov +1

    MaqolaSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20202 iqtibos
    ABI

  5. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +4

    MaqolaSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 iqtibos
    ABI

  6. Features of Liquid–Phase Epitaxy of (InSb)<sub>1–z</sub>(Sn2)<sub>z</sub> Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

    Shukrullo Usmonov, U. P. Asatova, A. M. Akhmedov

    MaqolaSemiconductor Quantum Structures and Devices20221 iqtibos
    ABI

  7. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, A.S. Saidov, Sh. N. Usmonov +3

    PreprintGaN-based semiconductor devices and materialsResearch Square20230 iqtibos
    ABI

  8. Structural Features of the Epitaxial Layer of the (GaAs)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(Ge&lt;sub&gt;2&lt;/sub&gt;)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Solid Solution Grown from a Bismuth Solution Melt

    A.S. Saidov, M. U. Kalanov, D. V. Saparov +4

    MaqolaSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 iqtibos
    ABI

  9. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +5

    MaqolaGaN-based semiconductor devices and materialsActa Physica Polonica A20250 iqtibos
    ABI