Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers
A.S. SaidovPhysical Engineering Institute “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. Sh. RazzakovPhysical Engineering Institute “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. V. SaparovPhysical Engineering Institute “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Annotatsiya
Epitaxial layers of (Sn2)1−x (InSb)x solid solutions were grown from an indium-based solution melt confined between two horizontal GaAs substrates in a temperature interval from 325 to 200°C. Scanning microprobe and X-ray diffraction investigations of the GaAs-(Sn2)1−x (InSb)x heterostructures showed that crystallographic perfection of the epitaxial layers depends on the epitaxial growth conditions.
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