Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures
A.S. SaidovPhysicotechnical Institute, Physics of the Sun Scientific Production Association, Uzbek Academy of Sciences, Tashkent, UzbekistanSh. N. UsmonovPhysicotechnical Institute, Physics of the Sun Scientific Production Association, Uzbek Academy of Sciences, Tashkent, UzbekistanU. Kh. RakhmonovPhysicotechnical Institute, Physics of the Sun Scientific Production Association, Uzbek Academy of Sciences, Tashkent, Uzbekistan
ABI
Annotatsiya
Epitaxial layers of substitutional solid solution (ZnSe)1−x−y(Si2) x (GaP) y (0.1 ≤x≤ 1, 0≤y≤0.9) on pSi substrates were developed from a limited volume of tin solution-melt using the method of a liquid phase epitaxy. The spectral dependency of photosensitivity of the pSi—n(ZnSe)1 −x−y (Si2) x (Ga.P) y structures was studied and the peaks of photoresponses at energies of photons of 1.6, 1.66, and 1.92 eV at room temperature were discovered. It was shown that the forward-bi as regions of the volt—ampere characteristics of structures under study can be described by the power dependence of −I = I 0 + B · V m with various values of a power index at various values of the voltage applied.
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