Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy
A.S. SaidovPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. KutlimratovPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanБ. СапаевPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanU. T. DavlatovPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Annotatsiya
The spectral and current-voltage (I–V) characteristics of Si-Si1−x Gex heterostructures grown by liquid phase epitaxy on silicon substrates were studied. The dependence of the longwave photosensitivity boundary of these structures on the variband solid solution composition was determined. It is shown that these variband solid solutions can serve as transition buffer layers between silicon substrates and a structure based on a different semiconductor. These structures can be employed in elements converting a part of the IR solar radiation in cascade solar cells and in photodetectors for the optical fiber communication lines transmitting signals with the wavelengths λ=1.33 and 1.5 μm.
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