U. T. Davlatov

2 ta ish

Physical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

1. Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy

   A.S. Saidov, A. Kutlimratov, Б. Сапаев +1

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20012 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.251138

2. Study of current-voltage characteristics of Si-(Si 2 ) 1-x (GaAs) x grown on polycrystal silicon substrate by Liquid Phase Epitaxy method

   A.S. Saidov, A. Kutlimratov, Б. Сапаев +1

   MaqolaSemiconductor materials and interfaces20040 iqtibos

   ABIABI:AkademIndex/openalex/2004.article.000378