The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure
A. Yu. LeĭdermanPhysical-Technical Institute Physics of the Sun, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanА. С. СаидовPhysical-Technical Institute Physics of the Sun, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanA. B. KarshievPhysical-Technical Institute Physics of the Sun, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
ABI
Annotatsiya
The thermoelectric effect, i.e., generation of current and voltage under uniform heating, is for the first time observed in a graded-gap Si1–x Gex (0 ≤ x ≤ 1) continuous solid solution and an n–Si–p–Si1–x Gex heterostructure made on its basis. Currents of 0.0025–0.0035 µA and voltages of 0.05–0.3 mV have occurred in the temperature range of 40–250°C.
Mavzular
Identifikatorlar
Iqtiboslar va manbalar
Koʻrsatkichlar — AkademScholar · Tez orada