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Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

A. Yu. LeydermanPhysico-Technical Institute of SPA “Physics-Sun”, Uzbekistan Academy of Sciences, Uzbekistan, 100084, Tashkent, Chingiz Aytmatov str., 2BA.K. UteniyazovKarakalpak State University named after Berdakh, Uzbekistan, Republic of Karakalpakstan, 230012 Nukus, Abdirov str.,M.T. NsanbaevNukus State Pedagogical Institute named after Ajiniyaz Republic of Karakalpakstan, Nukus, P. Seyitov str

Semiconductor Physics Quantum Electronics & Optoelectronicsjournal2020en

ABI

Annotatsiya

The recombination rate of non-equilibrium carriers has been calculated for the model of the semiconductor with donor-acceptor pairs, the recombination activity of which decreases during excitation. It has been shown that, even at a very low inertia of intra-complex exchange, this process can lead to decreasing the recombination rate. The obtained results demonstrate a principal distinction from the classical Shockley–Read statistics.

Mavzular

Silicon and Solar Cell Technologies Semiconductor materials and interfaces Silicon Nanostructures and Photoluminescence

Identifikatorlar

DOI: 10.15407/spqeo23.03.290

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