Impurity thermophotovoltaic effect of the grain boundaries of technical-grade silicon
М. С. СаидовPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA.S. SaidovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. N. UsmonovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Annotatsiya
It is shown that in photocells based on technical-grade polycrystalline Si that are exposed to subband photons, the current and voltage generated are higher than in single-crystalline Si photocells. This is explained as a manifestation of the impurity thermophotovoltaic effect of the grain boundaries of technical-grde polycrystalline Si.
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