Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures
Sh. N. UsmonovPhysicotechnical Institute, NPO “Fizika-Sun”, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA.S. SaidovPhysicotechnical Institute, NPO “Fizika-Sun”, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanМ. С. СаидовPhysicotechnical Institute, NPO “Fizika-Sun”, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. Yu. LeĭdermanPhysicotechnical Institute, NPO “Fizika-Sun”, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanK. A. AmonovPhysicotechnical Institute, NPO “Fizika-Sun”, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
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The volt-ampere characteristics (VAC) of pSi-n(Si2)1−x (ZnSe) x structures that are grown by liquidphase epitaxy from a limited volume of a tin solution (melt) have been studied. Their unusual property—decrease of the current with increase of the temperature from 100 to 140°C—is explained on the basis of a recombination model that takes into account the change of the concentration of the effectively functioning recombination impurity centers due to intensive creation of vacancies and defect-impurity complexes during photocell excitation.
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