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Formation and electrical properties of anisotype heterojunctions p-Cu2ZnSnSe4 /n-GaAs

Ahmed YusupovDepartment of Electronics and Radio Engineering, Tashkent University of Information Technologies named after Muhammad al-Khwarizmi, Tashkent, 100200, UzbekistanAbdukhalil A. TulyaganovDepartment of Electronics and Radio Engineering, Tashkent University of Information Technologies named after Muhammad al-Khwarizmi, Tashkent, 100200, UzbekistanZafar TuraevDepartment Physics of Semiconductors and Polymers, National University of Uzbekistan named after Mirzo Ulugbek Tashkent, 100095, UzbekistanJean Chamberlain ChedjouDepartment of Transportation Informatics (TIG), University of Klagenfurt, Klagenfurt, 9020, AustriaKyandoghere KyamakyaDepartment of Transportation Informatics (TIG), University of Klagenfurt, Klagenfurt, 9020, Austria

Developments of Artificial Intelligence Technologies in Computation and Roboticsjournal2020en

ABI

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Mavzular

Chalcogenide Semiconductor Thin Films Quantum Dots Synthesis And Properties Phase-change materials and chalcogenides

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DOI: 10.1142/9789811223334_0183

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