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Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

A. É. AtamuratovPhysics Department, Urgench State University, Kh. Olimjan Str., 14, Urgench 220100, UzbekistanAhmed YusupovDepartment of Electronics and Radio Engineering, Tashkent University of Information Technologies, A. Temur Str., 108, Tashkent 100200, UzbekistanZamira AtamuratovaPhysics Department, Urgench State University, Kh. Olimjan Str., 14, Urgench 220100, UzbekistanJean Chamberlain ChedjouDepartment of Transportation Informatics, University of Klagenfurt, 9020 Klagenfurt, AustriaKyandoghere KyamakyaDepartment of Transportation Informatics, University of Klagenfurt, 9020 Klagenfurt, Austria

Applied Sciencesjournal2020en

ABI

Annotatsiya

In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charge, the capacitance of lateral junctions linearly depends on the linear size of the trapped charge. The dependence of the difference between drain–substrate and source–substrate capacitances on the linear size of trapped charges is also simulated. The revealed dependence can be used in measurements to estimate the linear size of oxide trapped charges induced by hot carrier injection, which can occur during MOSFET operation at defined conditions.

Mavzular

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Integrated Circuits and Semiconductor Failure Analysis

Identifikatorlar

DOI: 10.3390/app10217935

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