Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

1. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   MaqolaSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 iqtibos

   ABIABI:AkademIndex/openalex/2022.article.006400

2. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

   A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

   MaqolaSemiconductor materials and devices20220 iqtibos

   ABIABI:AkademIndex/openalex/2022.article.011220

3. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   MaqolaSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.009018