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Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

A.E. AbdikarimovUrgench State University,Physics department,Urgench,UzbekistanMirzabahrom FoziljonovAndijan State University,Physics department,Andijan,UzbekistanИ. Н. КаримовAndijan State University,Physics department,Andijan,Uzbekistan

2022en

ABI

Annotatsiya

In the paper the effect of local charge on capacitance of source-gate (drain-gate) transitions is considered in a nanoscale SOI FinFET. Capacitance-voltage characteristic of the source-gate transition is simulated by using the small AC signal method. C-V dependence of the source-gate transition is considered at different positions of the local oxide trapped charge. Minor and major carrier concentration distributions along the channel in the base at different positions of oxide trapped charge is analyzed. It is shown that the carriers concentration near lateral drain (source)-base transition border is monotonically changed with position of oxide trapped charge.

Mavzular

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Integrated Circuits and Semiconductor Failure Analysis

Identifikatorlar

DOI: 10.1109/icisct55600.2022.10146967

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