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И. Н. Каримов

5 ta ish

Physics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, Uzbekistan

  1. Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

    С. З. Зайнабидинов, P.I. Baranskiy, И. Н. Каримов +2

    MaqolaElectromagnetic Effects on MaterialsSolid-State Electronics19951 iqtibos
    ABI

  2. Tensor electric properties of n-Si monocrystals

    И. Н. Каримов, Alisher Baxadirov, A.A. Khlbekov +1

    MaqolaSemiconductor materials and interfaces19950 iqtibos
    ABI

  3. Determination of the surface state density on the semiconductor-dielectric interface in the structures Al-SiO 2 -Si and Al-SiO 2 -n-Si at low temperature

    G. Gulyamov, И. Н. Каримов, N. Yu. Sharibaev +1

    MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 iqtibos
    ABI

  4. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

    A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

    MaqolaSemiconductor materials and devices20220 iqtibos
    ABI

  5. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    MaqolaSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos
    ABI