Solid-State Electronics

1 ta ish

Jurnal · ISSN 0038-1101

1. Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

   С. З. Зайнабидинов, P.I. Baranskiy, И. Н. Каримов +2

   MaqolaElectromagnetic Effects on MaterialsSolid-State Electronics19951 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.379727