Field-Effect Photodetectors Based on TMDCs: State of the Art and Future Trends
Annotatsiya
In the past two decades, two-dimensional (2D) materials, particularly transition metal dichalcogenides (TMDCs), have made a new way in the history of photonics and optoelectronics by making them promising candidates for future photodetectors with their controllable bandgap width, high charge carrier transport properties, and strong light-matter interaction. The realization of advanced device concepts are highly effected by various TMDCs with unique electronic and optical characteristics. Fast response time, high sensitivity, and wide spectral coverage are gained by harmonizing the architectural advantages of field-effect transistors with the high sensitivity inherent in 2D materials in TMDC-based field-effect transistors (TMDC-FETs). However, a number of drawbacks blocked their widespread use, such as high contact resistance, the presence of interface traps, high dark currents, and relatively low charge carrier mobility. In this review, recent developments in single-layer, heterostructure, and hybrid TMDC based FET photodetectors, with a particular focus on interface design, doping techniques, scalable manufacturing, and performance optimization are discussed.