F. Eshchanov

1 ta ish

Agency for Assessment of Knowledge and Skills, Khorezm Regional Department, Urgench, Uzbekistan

1. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

   M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

   MaqolaSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.009026