Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
A. É. AtamuratovUrgench State University, Urgench, UzbekistanB. O. JabbarovaUrgench State University, Urgench, UzbekistanM. M. KhalilloevUrgench State University, Urgench, UzbekistanА. YusupovTashkent University of Information technologies, Tashkent, UzbekistanA.G. LoureriroUniversity of Santiago de Compostella,Department. of Electronics and Computer Sciences,Santiago de Compostella,Spain
2021en
ABI
Annotatsiya
In this work we study the self-heating effect (SHE) in nanoscale Silicon on Insulator Junctionless (SOI JL) FinFET transistor with fin cross section in rectangular, trapeze and triangle form. The lattice temperature dependence on the channel length as well as on buried oxide thickness is considered. It is shown that for considered transistor structure the lattice temperature in the middle of the channel is lower than at lateral sides, near source and drain. Also, we have found at the same conditions the lattice temperature depends on shape of channel cross section too.
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