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6 ta ish

Ish: Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Maqola201111 iqtibos
    ABI

  2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Maqola20126 iqtibos
    ABI

  3. Impact of self-heating effect on the performance of hybrid FinFET

    Rajeev Pankaj Nelapati, K. Sivasankaran

    Maqola20185 iqtibos
    ABI

  4. Physical origin of negative differential resistance in SOI transistors

    Liam McDaid, Steven Hall, Phil Mellor +2

    Maqola19895 iqtibos
    ABI

  5. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    MaqolaAdvancements in Semiconductor Devices and Circuit Design20144 iqtibos
    ABI

  6. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

    Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3

    Maqola20184 iqtibos
    ABI