Maqola

Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

A.E. AbdikarimovCITIUS, Universidad de Santiago de Compostela, SpainGuillermo IndalecioCITIUS, Universidad de Santiago de Compostela, SpainEnrique ComesañaCITIUS, Universidad de Santiago de Compostela, SpainAntonio J. García‐LoureiroCITIUS, Universidad de Santiago de Compostela, SpainNatalia SeoaneCollege of Engineering, Swansea University, United KingdomK. KálnaCollege of Engineering, Swansea University, United KingdomA. É. AtamuratovUrganch State University, Urganch, Uzbekistan

2014en

ABI

Annotatsiya

Several sources of variability such as imperfections during the manufacturing process, variations in critical dimensions (eg. oxide thickness, gate length), or intrinsic parameter fluctuations (eg. random dopants), influence the both device design and device and circuit performance. In this work, we have studied the impact of a shape of the device body on the characteristics of a 10.7 nm gate length SOI-FinFET. After a meticulous calibration against Monte-Carlo simulations, we have studied the effect of changing the shape of the body from a square cross-section to a triangular one on the sub-threshold region of the device. We have analysed four figures of merit: off-current, sub-threshold slope, threshold voltage and sub-threshold swing. The best results, in terms of lower off-current and sub-threshold swing, were obtained for the triangular shape device, which makes this particular geometry more suitable for digital applications.

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Mavzular

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices Silicon Carbide Semiconductor Technologies

Identifikatorlar

DOI: 10.1109/iwce.2014.6865877

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