Natalia Seoane

1 ta ish

College of Engineering, Swansea University, United Kingdom

1. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   MaqolaAdvancements in Semiconductor Devices and Circuit Design20144 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.386764