Ushbu ish iqtibos qilgan ishlar

10 ta ish

Ish: Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

1. Short-channel effects in SOI MOSFETs

   S. Veeraraghavan, J.G. Fossum

   Maqola19897 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.390677

2. Statistical variability and reliability in nanoscale FinFETs

   Xingsheng Wang, A. R. Brown, B. Cheng +1

   Maqola20112 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.390676

3. Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

   Asen Asenov, Savaş Kaya, A. R. Brown

   Maqola20032 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.390678

4. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.502691

5. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.502692

6. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.502693

7. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.502694

8. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.502695

9. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.502696

10. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.502697