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Advancements in Semiconductor Devices and Circuit Design

147 ta ish

  1. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    MaqolaSemiconductor materials and devices20241 iqtibos
    ABI

  2. Electrodifusion of Manganese Atoms in Silicon

    Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 iqtibos
    ABI

  3. Theory of Electron Transport in Two-Barrier Five-Layer Semiconductor Structures

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Makhliyo A. Mamatova +2

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20241 iqtibos
    ABI

  4. Mathematical Model for Thermo-Electrical Instabilities in Semiconductors

    Mukaddas Arzikulova

    MaqolaThermal properties of materialsMathematical Modelling and Applications20241 iqtibos
    ABI

  5. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 iqtibos
    ABI

  6. Energy Levels of Nanodots Inside Semiconductor Nanowires

    A. B. Davlatov, G. Gulyamov, Doston Urinboev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignBrazilian Journal of Physics20241 iqtibos
    ABI

  7. Nonlinear Properties of an Inhomogeneous Diode Structure in a Strong Microwave Field

    Sanobar Reymbaeva, G. Abdurakhmanov, Aleksandra Orel

    MaqolaSemiconductor Quantum Structures and DevicesWorld Journal of Condensed Matter Physics20231 iqtibos
    ABI

  8. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    Maqola2D Materials and ApplicationsApplied Sciences20231 iqtibos
    ABI

  9. Transient Processes in Semiconductor Diodes and Fundamentals of Recombination Theory

    Yurii R. Nosov

    BobSilicon and Solar Cell Technologies19690 iqtibos
    ABI

  10. Planar Diode with a Thin Base

    Yurii R. Nosov

    BobSemiconductor Quantum Structures and Devices19690 iqtibos
    ABI

  11. Differential Resistance and Diffusion Capacitance of Junctions in p-n-n+ Structures at high Injection Levels

    D. A. Aronov, Ya. P. Kotov

    BobSilicon and Solar Cell Technologies19710 iqtibos
    ABI

  12. Fluctuation levels in disordered systems (survey)

    I. M. Lifshit︠s︡, S. A. Gredeskul, L. А. Pastur

    MaqolaQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19760 iqtibos
    ABI

  13. Effect of nonuniformities and the measurement current on the current-voltage characteristics of tunnel junctions

    P. N. Chubov

    MaqolaQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19760 iqtibos
    ABI

  14. Self-blocking tunnel currents and current-voltage characteristics of S-I-S tunnel contacts

    V. P. Seminozhenko

    MaqolaQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19780 iqtibos
    ABI

  15. Bias current in semiconductors during overcharging of impurity centres

    B. B. Baizakov, R. A. Moominov, S. H. Shamirzaiev +1

    MaqolaAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)19810 iqtibos
    ABI

  16. Investigation of the band spectrum of semiconductors by means of a tunnel diode under pressure

    Z. M. Alekseeva, A. P. Vyatkin, А. П. Дмитриев

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignRussian Physics Journal19810 iqtibos
    ABI

  17. Behavior of excess currents in n-type gallium arsenide tunnel diodes

    A. P. Vyatkin, V. A. Glushchenko, R. P. Parkhomenko +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 iqtibos
    ABI

  18. On the diamagnetism of deep impurities in quantized semiconductor films

    E. Z. Imamov, В. Д. Кревчик

    MaqolaAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (b)19820 iqtibos
    ABI

  19. On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    MaqolaAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)19820 iqtibos
    ABI

  20. Electron–phonon interaction-induced nonlinearity of the current–voltage characteristic of superconductor–normal-metal point contacts

    I. K. Yanson, Г. В. Камарчук, A. V. Khotkevich

    MaqolaSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19840 iqtibos
    ABI

  21. Study of quantum decays of metastable current states in rf SQUIDs

    I. M. Dmitrenko, V. A. Khlus, G. M. Tsoĭ +1

    MaqolaSemiconductor Quantum Structures and DevicesSoviet Journal of Low Temperature Physics19850 iqtibos
    ABI

  22. Nonlinear conductivity in island bismuth films

    А. В. Бутенко, E. I. Bukhshtab, V. V. Pilipenko

    MaqolaSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19850 iqtibos
    ABI

  23. Two-dimensional charge layer at the boundary between two insulators

    Yu. Z. Kovdrya

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignSoviet Journal of Low Temperature Physics19850 iqtibos
    ABI

  24. Changes in the conducting properties of granular indium films in a metal–insulator transition

    Б. И. Белевцев, Yu. F. Komnik, А. В. Фомин

    MaqolaQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19860 iqtibos
    ABI

  25. Flux-quantization oscillations in normal metals and semiconductors in the localization regime

    I. O. Kulik

    MaqolaQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19870 iqtibos
    ABI