R. P. Parkhomenko

1 ta ish

V. D. Kuznetsov Siberian Physicotechnical Institute at the State university, Tomsk

1. Behavior of excess currents in n-type gallium arsenide tunnel diodes

   A. P. Vyatkin, V. A. Glushchenko, R. P. Parkhomenko +1

   MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/openalex/1981.article.000120