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Bias current in semiconductors during overcharging of impurity centres

B. B. BaizakovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentR. A. MoominovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentS. H. ShamirzaievS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentA.Ya. YafasovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent

physica status solidi (a)journal1981en

ABI

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Annotatsiya mavjud emas.

Mavzular

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and interfaces Semiconductor Quantum Structures and Devices

Identifikatorlar

DOI: 10.1002/pssa.2210670148

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