A.Ya. Yafasov

6 ta ish

Physical and Technical Institute, Academy of Sciences of the Usbek SSR, Tashkent

1. Influence of ultrasound on ionic diffusion process in semiconductors

   В. Д. Кревчик, Р. А. Муминов, A.Ya. Yafasov

   MaqolaSolidification and crystal growth phenomenaphysica status solidi (a)19813 iqtibos

   ABIABI:AkademIndex/openalex/1981.article.000021

2. Tectonic Factor in the Formation of the Radon Fields in the Atmosphere of the Tashkent Subway

   A.Ya. Yafasov, V.A. Akimov

   MaqolaGeotechnical and Geomechanical EngineeringAtomic Energy20012 iqtibos

   ABIABI:AkademIndex/openalex/2001.article.000106

3. Bias current in semiconductors during overcharging of impurity centres

   B. B. Baizakov, R. A. Moominov, S. H. Shamirzaiev +1

   MaqolaAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)19810 iqtibos

   ABIABI:AkademIndex/openalex/1981.article.000098

4. Two‐Photon Interband Absorption in Qunntized Semiconductor Films with Participation of Deep Impurity Centers

   В. Д. Кревчик, A.Ya. Yafasov

   MaqolaNonlinear Optical Materials Studiesphysica status solidi (b)19820 iqtibos

   ABIABI:AkademIndex/openalex/1982.article.000055

5. Investigation of the effect of large doses on the Si(Li) detector parameters

   A. I. Koifman, Р. А. Муминов, A.Ya. Yafasov

   MaqolaRadiation Detection and Scintillator Technologiesphysica status solidi (a)19820 iqtibos

   ABIABI:AkademIndex/openalex/1982.article.000068

6. Li-drifted Si detectors for charged particle spectrometry in a wide energy range

   B.B. Bajzakov, B. N. Zaveryukhin, A. Sh. Iskanderov +2

   MaqolaParticle Detector Development and PerformancePribory i Tekhnika Ehksperimenta19820 iqtibos

   ABIABI:AkademIndex/openalex/1982.article.000122