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A. I. Koifman

6 ta ish

Institute of Nuclear Physics, Tashkent

  1. Reactor irradiation enhanced hetero-diffusion in silicon

    A. I. Koifman, O. R. Niyazova

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19723 iqtibos
    ABI

  2. Interstitial mechanism of the low-temperature gold migration in silicon

    M. A. Kaneev, A. I. Koifman, O. R. Niyazova

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19732 iqtibos
    ABI

  3. Influence of structure defects on the radiation enhanced gold diffusion in silicon

    A. I. Koifman, N. Narkulov, Marat S. Yunusov

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19751 iqtibos
    ABI

  4. The low-temperature doping of silicon by radiation-induced diffusion

    A. I. Koifman, A. N. Narkulov, Б. Л. Оксенгендлер +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19760 iqtibos
    ABI

  5. Investigation of the effect of large doses on the Si(Li) detector parameters

    A. I. Koifman, Р. А. Муминов, A.Ya. Yafasov

    MaqolaRadiation Detection and Scintillator Technologiesphysica status solidi (a)19820 iqtibos
    ABI

  6. Influence of small radiation doses on the parameters of injection lasers

    A. V. Khaydarov, A. I. Koifman, I. V. Mart’yanova

    MaqolaLaser Material Processing Techniques19950 iqtibos
    ABI