N. Narkulov

3 ta ish

National University of Uzbekistan, 100174, Tashkent, Uzbekistan

1. Silicon with Binary GexSi1 – x Compounds

   Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.002219

2. Influence of structure defects on the radiation enhanced gold diffusion in silicon

   A. I. Koifman, N. Narkulov, Marat S. Yunusov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19751 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.655288

3. Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon

   Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, U. Kh. Kurbanova +2

   MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.008623